dr Radosław Wasielewski

Telefon: (71) 375 9319
Login: radwas
E-mail: login@ifd.uni.wroc.pl

Doktorat:



Data: June 11, 2010
Temat: Właściwości fizykochemiczne powierzchni rutenu w aspekcie zastosowania tego materiału w litografii wykorzystującej promieniowanie elektromagnetyczne z zakresu skrajnie krótkiego ultrafioletu
Osoba: mgr Radosław Wasielewski
Promotor: prof. dr hab. Antoni Ciszewski

Publikacje

  • Radosław Wasielewski, Piotr Mazur, Miłosz Grodzicki, Antoni Ciszewski,TiO thin films on GaN(0001),Physica Status Solidi B 252(5) (2015) 1001-1005
  • Miłosz Grodzicki, Radosław Wasielewski, Piotr Mazur, Stefan Zuber, Antoni Ciszewski ,TiO2 thin films grown on SiO2-Si(111) by the reactive evaporation method ,Optica Applicata Vol. XLIII,No.1 (2013) 99-107.
  • Miłosz Grodzicki, Piotr Mazur, Radosław Wasielewski, Antoni Ciszewski,Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface ,Optica Applicata Vol.XLIII, No.1 (2013) 91-98.
  • Miłosz Grodzicki, Radosław Wasielewski,Badania drgań struny,Aparatura Badawcza i Dydaktyczna 1/2012 (2012) 13-17.
  • J. Brona. R. Wasielewski, A. Ciszewski,Ultrathin films of Cu on Ru(1 0 -1 0): Flat bilayers and mesa islands , Applied Surface Science 258 (2012) 9623-9628.
  • Radosław Wasielewski, Miłosz Grodzicki,STM study of passivated Ni-6H-SiC(0001) contact at elevated temperature,2012 International Students and Young Scientists Workshop „Photonics and Microsystems”, 6-8 July 2012 Szklarska Poręba (2012) 126-128.
  • Radosław Wasielewski, Miłosz Grodzicki, Formation of ruthenium oxide chain structure on Ru(1 0 -1 0) surface as a template for study of molecules electronic properties,2012 International Students and Young Scientists Workshop „Photonics and Microsystems", 6-8 July 2012 Szklarska Poręba (2012) 123-125.
  • R. Dylewicz, A.Z. Khokhar, R. Wasielewski, P. Mazur, F. Rahman, Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes,Appl Phys B 107: (2012) 393-399.
  • Rafal Dylewicz, Ali Z Khokhar, Radosław Wasielewski, Piotr Mazur, Faiz Rahman,Nanotexturing of GaN light-emitting diode material through mask-less dry etching,Nanotechnology 22 (2011) 055301 (7pp).
  • R. Dylewicz, R. M. De La Rue, R. Wasielewski, P. Mazur, G. Mezősi, A. C. Bryce, Fabrication of submicron-sized features in InP/InGaAsP/AlGalnAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry , J. Vac. Sci. Technol. B 28(4) (2010) 882-890.
  • M. Grodzicki, R. Wasielewski, S.A. Surma, A. Ciszewski,Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching,Acta Physica Polonica A vol.116 (2009) S82-S84.
  • Miłosz Grodzicki, Radosław Wasielewski, Piotr Mazur, Stefan Zuber, Antoni Ciszewski,Preparation of TiO2 thin films by reactive evaporation method ,2009 International Students and Young Scientists Workshop "Photonics and Microsystems", Harz University, Wernigerode, Germany, 25-27 June, (2009) 25-27.
  • Miłosz Grodzicki, Radosław Wasielewski, Piotr Mazur, Antoni Ciszewski,Preparation technique of 6H-SiC(0001) wafers,2009 International Students and Young Scientists Workshop "Photonics and Microsystems", Harz University, Wernigerode, Germany, 25-27 June (2009) 28-30.
  • R. Wasielewski, J. Domaradzki, D. Wojcieszak, D. Kaczmarek, A. Borkowska, E.L. Prociow, A. Ciszewski,Surface characterization of TiO2 thin films obtained by high-energy reactive magnetron sputtering ,Applied Surface Science 254 (2008) 4396-4400.
  • Jarosław Domaradzki, Danuta Kaczmarek, Agnieszka Borkowska, Dieter Schmeisser, Sebastian Mueller, Radosław Wasielewski, Antoni Ciszewski, Damian Wojcieszak,Influence of annealing on the structure and stoichiometry of europium-doped titanium dioxide thin films,Vacuum Vol. 82 (2008) 1007-1012.
  • Danuta Kaczmarek, Jarosław Domaradzki, Damian Wojcieszak, Radosław Wasielewski, Agnieszka Borkowska, E.L. Prociow, Antoni Ciszewski,Structural investigations of TiO2:Tb thin films by X-ray diffraction and atomic force microscopy,Applied Surface Science Vol.254 (2008) 4303-4307.
  • M. N. Hedhili, B. V. Yakshinskiy, R. Wasielewski, A. Ciszewski, T. E. Madey,Adsorption and electron-induced polymerization of methyl methacrylate on Ru(10-10),The Journal of Chemical Physics 128 (2008) 174704-10.
  • B.V. Ykshinskiy, R. Wasielewski, E. Loginova, M.N. Hedhili, Theodore E. Madey,DIET processes on ruthenium surfaces related to extreme ultraviolet lithography (EUVL),Surface Science 602 (2008) 3220-3224.
  • B. V. Yakshinskiy, R. Wasielewski. E. Loginova, T. E. Madey,Carbon accumulation and mitigation processes, and secondary electron yields of ruthenium surfaces,Proc. SPIE, 6517 (2007) 65172.
  • R. Wasielewski, B. V. Yakshinskiy, M. N. Hedhili, A. Ciszewski, T. E. Madey,Surface chemistry of Ru: relevance to optics lifetime in EUVL,23rd European Mask and Lithography Conference, Proc. of SPIE Vol.6533 (2007) 653316-1/12
  • R. Wasielewski, J. Domaradzki, A. Borkowska, D. Kaczmarek, A. Ciszewski,Structural Investigations of Thin Oxide Films Based on Titanium Dioxide,XXX International Conference of IMAPS Poland Chapter Kraków, September (2006) 24 - 27.
  • J. Domaradzki, A. Borkowska, D. Kaczmarek, L. Prociów, R. Wasielewski, A. Ciszewski,On the microstructure of TiHfOx thin films ,Optica Applicata, Vol. XXXV 3 (2005) 431-435.